https://news.yahoo.com/nxp-advances-5g-gallium-nitride-160000443.html
 
NXP Semiconductors N.V. today announced the grand opening of its 150 mm (6-inch) RF Gallium Nitride (GaN) fab in Chandler, Arizona, the most advanced fab dedicated to 5G RF power amplifiers in the United States. The new internal factory combines NXP's expertise as the industry leader in RF power and its high-volume manufacturing know-how, resulting in streamlined innovation that supports the expansion of 5G base stations and advanced communication infrastructure in the industrial, aerospace and defense markets.
 
NXP's strategic move to build an internal GaN fab was driven by its ability to achieve higher performance benefits through leveraging its core competency in cellular infrastructure design, proven track record for high-volume manufacturing and consistency and leadership in total quality processes.

"I am excited by the opening of our new facility in Chandler as it underscores NXP's decades-long commitment to GaN and the communications infrastructure market," said Paul Hart, Executive Vice President and GM of the Radio Power Group at NXP. "I would like to thank our customers for their collaboration throughout the years and the entire NXP team that has been instrumental in creating the world's most advanced RF GaN fab, which is designed and ready to scale to 6G and beyond."

The fab is set to ramp quickly with NXP leveraging its Chandler-based team and their long-standing expertise in compound semiconductor manufacturing. Arizona Governor Doug Ducey added: "With this new state-of-the-art manufacturing facility in Chandler, Arizona is set to expand its reputation as a high-tech manufacturing hub and a pioneer in 5G innovation. We're grateful to NXP for bringing more jobs and investment to our state."

The internal factory will serve as an innovation hub that facilitates collaboration between the fab and NXP's onsite R&D team. NXP engineers can now more rapidly develop, validate and protect inventions for current and future generations of GaN devices, resulting in shorter cycle times for NXP GaN innovations.
 
NXP's new Chandler-based GaN fab is qualified now, with initial products ramping in the market and expected to reach full capacity by the end of 2020.
 
I find it interesting to see more semiconductor fabrication come to the USA.