https://videocardz.com/newz/sk-hynix-to-discuss-24gb-896gb-s-hbm3-and-27gbps-gddr6-memory-at-isscc-2022 Last October SK Hynix revealed it will have a 12-Hi (layer) HBM3 DRAM with a speed of 820 GB/s, only to be preparing even faster memory with 896 GB/s bandwidth for a ‘reveal’ at ISSCC 2022 (IEEE International Solid-State Circuits Conference).
The details are not yet known, but the title of the session already confirms the speed and the memory configuration. It is also to be 12 layer HBM3 DRAM with a capacity of 196 Gb (24GB). This would be achieved through TSV (through silicon via) auto-calibration and machine-learning optimizations. What is also unclear is whether this type of memory is literally a prototype on paper or rather something that SK hynix intends to push into mass production.
SK Hynix’s first HBM3 specs featured a 5.2 Gbit/s data rate per pin (665 GB/s) only to be updated by 23% to 6.4 Gbit/s (819 GB/s) a few months later. The latest 7 Gbit/s memory would provide an additional 10% upgrade over October’21 spec. Furthermore, the company is also planning to discuss T-coil-based 27 Gbps GDDR6 memory featuring Merged-MUX TX, Optimized WCK Operation, and Alternative Data-Bus. Such memory would be even faster than Samsung’s 24Gbps memory which is now sampling. Hynix’s memory would be 16Gb in capacity, so the same capacity as Samsung’s GDDR6 and Micron’s GDDR6X.
The increase in data speeds is fantastic.